| PART |
Description |
Maker |
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2SB852 |
Darlington connection for high DC current gain. between base and emitter.
|
TY Semiconductor Co., Ltd
|
| 2SD1249 |
High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
| TIP140T TIP141T TIP142T |
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE- EMITTER SHUNT RESISTORS
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP142F TIP141F TIP140F |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
Power Innovations Limited
FAIRCHILD[Fairchild Semiconductor]
|
| OP793 OP798 |
NPN Pho to tran sis tor with Base- Emitter Resistor
|
OPTEK Technologies
|
| TIP147T |
(TIP145T - TIP147T) Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
Fairchild Semiconductor
|
| MJ10015-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10005-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10005 MJ10004 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
|
Boca Semiconductor Corp...
Boca Semiconductor Corporation
Boca Semiconductor Corporat...
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
